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An Investigation On The Interface Corrosion Behaviors Of Cobalt Interconnects In Chemical Mechanical Polishing Slurry, Kai-Xuan Qin, Peng-Fei Chang, Yu-Lin Huang, Ming Li, Tao Hang

Journal of Electrochemistry

Cobalt is widely regarded as the most promising interconnect material for 10 nm node and beyond. The development of a chemical mechanical planarization (CMP) slurry suitable for cobalt interconnect is a critical component for the application of cobalt interconnect. During CMP process of the interconnect layer, the achievement of high-quality surface after planarization is greatly challenged by the metal corrosion in CMP slurry. In this contribution, the corrosion behavior of cobalt in a slurry with potassium persulfate (KPS) as an oxidizer, glycine as a complexing agent, and benzotriazole (BTA) as an inhibitor was investigated. Static erosion rates (SER) of cobalt …