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Full-Text Articles in Engineering
Fpga Acceleration Of The Phylogenetic Likelihood Function For Bayesian Mcmc Inference Methods, Stephanie Zierke, Jason D. Bakos
Fpga Acceleration Of The Phylogenetic Likelihood Function For Bayesian Mcmc Inference Methods, Stephanie Zierke, Jason D. Bakos
Faculty Publications
Background
Likelihood (ML)-based phylogenetic inference has become a popular method for estimating the evolutionary relationships among species based on genomic sequence data. This method is used in applications such as RAxML, GARLI, MrBayes, PAML, and PAUP. The Phylogenetic Likelihood Function (PLF) is an important kernel computation for this method. The PLF consists of a loop with no conditional behavior or dependencies between iterations. As such it contains a high potential for exploiting parallelism using micro-architectural techniques. In this paper, we describe a technique for mapping the PLF and supporting logic onto a Field Programmable Gate Array (FPGA)-based co-processor. By leveraging …
High-Performance Heterogeneous Computing With The Convey Hc-1, Jason D. Bakos
High-Performance Heterogeneous Computing With The Convey Hc-1, Jason D. Bakos
Faculty Publications
Unlike other socket-based reconfigurable coprocessors, the Convey HC-1 contains nearly 40 field-programmable gate arrays, scatter-gather memory modules, a high-capacity crossbar switch, and a fully coherent memory system.
Integrated Circuit Implementation For A Gan Hfet Driver Circuit, Bo Wang, Jason D. Bakos, Antonello Monti
Integrated Circuit Implementation For A Gan Hfet Driver Circuit, Bo Wang, Jason D. Bakos, Antonello Monti
Faculty Publications
This paper presents the design and implementation of a new integrated circuit (IC) that is suitable for driving the new generation of high-frequency GaN HFETs. The circuit, based upon a resonant switching transition technique, is first briefly described and then discussed in detail, focusing on the design process practical considerations. A new level-shifter topology, used to generate the zero and negative gate-source voltages required to switch the GaN HFET, is introduced and analyzed. The experimental measurements included in this paper report the results of tests carried out on an IC designed and fabricated as part of the multiproject die in …