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Gate Stack And Channel Engineering: Study Of Metal Gates And Ge Channel Devices, Ravi Todi
Gate Stack And Channel Engineering: Study Of Metal Gates And Ge Channel Devices, Ravi Todi
Electronic Theses and Dissertations
The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technology within the sub-100 nm region requires an alternative high dielectric constant (high-k) oxide layer to counter high tunneling leakage currents, a metallic gate electrode to address polysilicon depletion, boron penetration and high polysilicon sheet resistance, and high mobility channel materials to boost the CMOS performance. Metal gates can also offer improved thermal and chemical stability, but their use requires that we improve our understanding of how the metal alloy phase, crystallographic orientation, and composition affect the electronic properties of the metal alloy-oxide interface. To replace n++ and …
Urban Infilling Impacts On Florida Solid Waste Facilities, Ravi Chander Nalamothu
Urban Infilling Impacts On Florida Solid Waste Facilities, Ravi Chander Nalamothu
Electronic Theses and Dissertations
Increasing urbanization in the US is leading to development or re-development of lands adjacent to solid waste facilities and these lands are being considered for residential communities and commercial projects. Thus, the potential for nuisance complaints against the pre-existing solid waste facility operations has become an increasing reality. The objective of this study was to develop a methodology to gather scientific and quantifiable data related to potential nuisances caused by landfills to determine setbacks and buffer zones near landfill and transfer station operations. Appropriate recommendations for these setbacks were made from case studies conducted at two landfills in Florida. The …