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Pd/Ni Metal-Oxide-Semiconductor Hydrogen Sensor Utilizing A Segregated Pd-Ti Adhesion Layer, Mark Wayne Jenkins

Electrical and Computer Engineering ETDs

A novel technique has been developed that incorporates an adhesion layer into a hydrogen sensor that is based on a MOS structure. Previous structures containing no adhesion layer exhibited long-term drift and device failure due to delamination of the gate. While devices that did incorporate a normal adhesion layer lost all of their sensitivity. This is the first demonstration of combining virtues of an adhesion layer for a noble metal on insulator while retaining hydrogen sensitivity in a field effect sensor. The design issues related to utilizing Pd films for hydrogen sensors are presented. The recipes for fabricating the sensors …