Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 7 of 7
Full-Text Articles in Engineering
Degradation Mechanism Due To Water Ingress Effect On The Top Contact Of Cu(In,Ga)Se2 Solar Cells, Deewakar Poudel, Shankar Karki, Benjamin Belfore, Grace Rajan, Sushma Swaraj Atluri, Sina Soltanmohammad, Angus Rockett, Sylvain Marsillac
Degradation Mechanism Due To Water Ingress Effect On The Top Contact Of Cu(In,Ga)Se2 Solar Cells, Deewakar Poudel, Shankar Karki, Benjamin Belfore, Grace Rajan, Sushma Swaraj Atluri, Sina Soltanmohammad, Angus Rockett, Sylvain Marsillac
Electrical & Computer Engineering Faculty Publications
The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of …
Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman
Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman
Electrical & Computer Engineering Faculty Publications
A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous …
Developing A Student Learning Strategy To Bridge Virtual Learning And Hands-On Activity, Gon Namkoong, Hargsoon Yoon, Yonghee Suh
Developing A Student Learning Strategy To Bridge Virtual Learning And Hands-On Activity, Gon Namkoong, Hargsoon Yoon, Yonghee Suh
Electrical & Computer Engineering Faculty Publications
This paper addresses the effectiveness of combined virtual and physical hands-on activities in students’ learning which was infused in the capstone senior design project. Senior design projects are open-ended and are similar to the research that scientists perform toward a more comprehensive understanding of nature or new scientific knowledge. As a reinforced learning methodology to greatly assist students’ reasoning and problem-solving skills, virtual learning was first integrated at the planning stage of their projects. This approach is in contrast with the typical senior design courses where only limited resources are available for planning experiments. Using virtual learning, students are able …
Design Of Organic Tandem Solar Cells Using Pcpdtbt: Pc61 Bm And P3ht: Pc71bm, Gon Namkoong, Patrick Boland, Keejoo Lee, James Dean
Design Of Organic Tandem Solar Cells Using Pcpdtbt: Pc61 Bm And P3ht: Pc71bm, Gon Namkoong, Patrick Boland, Keejoo Lee, James Dean
Electrical & Computer Engineering Faculty Publications
We conducted optical and electrical simulations with the goal of determining the optimal design for conjugated polymer-fullerene tandem solar cells using poly[2,6-(4,4-bis-(2-ethylhexyl)- 4H-cyclopenta[2,1- b;3,4- b′] dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT): [6,6]-phenyl C61 butyric acid methyl ester (PC61 BM) as a bottom cell and poly(3-hexylthiophene) (P3HT): [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) as a top cell. The effects of photon density, absorption, balanced and unbalanced charge carrier transport, and bimolecular recombination in the two subcells were incorporated into the simulations. We found that the maximum energy conversion efficiency (η) is 9% when charge carrier mobilities in …
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Electrical & Computer Engineering Faculty Publications
The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 …
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Electrical & Computer Engineering Faculty Publications
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …