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Impact Of Rram Read Fluctuations On The Program-Verify Approach, David M. Nminibapiel, Dmitry Veksler, J.-H. Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
Impact Of Rram Read Fluctuations On The Program-Verify Approach, David M. Nminibapiel, Dmitry Veksler, J.-H. Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
Electrical & Computer Engineering Faculty Publications
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.