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Investigation Of Epitaxial Lift-Off Gaas And Langmuir-Blodgett Films For Optoelectronic Device Applications, Divyang M. Shah
Investigation Of Epitaxial Lift-Off Gaas And Langmuir-Blodgett Films For Optoelectronic Device Applications, Divyang M. Shah
Dissertations
Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 μm gate length depletion mode MESFET made on silicon exhibited a unity current gain frequency ft = 34 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. A high input impedance amplifier has been implemented on silicon substrate using …