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Full-Text Articles in Engineering
Real-Space Electron Transfer In Iii-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Real-Space Electron Transfer In Iii-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur
Faculty Publications
The real-space transfer effect in a SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C‐V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to …
Transient Analysis Of A Porous Electrode, Sheba Devan, Venkat R. Subramanian, Ralph E. White
Transient Analysis Of A Porous Electrode, Sheba Devan, Venkat R. Subramanian, Ralph E. White
Faculty Publications
An analytical expression is presented for the voltage response including the transient voltage for a simple (i.e., no concentration gradients) porous electrode model subject to a sinusoidal input current density. The transient voltage response as a function of the frequency, exchange current density, and double layer capacitance is studied independent of the periodic (steady state) voltage response. The change in the voltage response in the transient region is compared to that of the periodic voltage response with respect to the parameters. The physical properties of the porous electrode can be estimated using the voltage response in the transient …