Engineering Commons^™

Study Of The Effects Of Deuterium Implantation Upon The Performance Of Thin-Oxide Cmos Devices, Sumit Kishore

Theses

The use of ultra thin oxide films in modem semiconductor devices makes them increasingly susceptible to damage due to the hot carrier damage. Deuterium in place of hydrogen was introduced by ion implantation at the silicon oxide-silicon interface during fabrication to satisfy the dangling bonds. Deuterium was implanted at energies of 15, 25 and 35 keV and at a dose of 1x10¹⁴/cm². Some of the wafers were subjected to N₂O annealing following gate oxide growth. It was demonstrated that ion implantation is an effective means of introduction of deuterium. Deuterium implantation brings about a …

Development Of An Ion Source For Implantation Of Decaborane, Ravidath Gurudath

Theses

Future generations of Si technology will require ultra shallow junctions (tens of nm) in the drain and source regions of MOS transistors. Fabrication of such shallow p-type junctions requires implantation of boron at ultra low energies (≡1keV), below the limits of standard ion implantation technology. A proposed solution involves implantation of B₁₀H_X⁺ ions in which boron atoms carry less than 10% of the beam energy. Thus shallow implantation may be possible with standard ion implanters operating at tens of kV.

This thesis is a part of the feasibility study of this novel technology. The ionization of …

Low Pressure Chemical Vapor Deposition (Lpcvd) Of Titanium Nitride : Synthesis And Characterization, Sameer Narsinha Dharmadhikari

Theses

Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850 C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction:

rate = 4.35*10^-5exp(-5150/T)*(P_NH3)^1.37(P_Ticl4)^-0.42

The titanium nitride thin …