Engineering Commons^™

Synthesis And Characterization Of Silicon Nitride Film Deposited By Plasma Enhanced Chemical Vapor Deposition From Ditertiary-Butyl Silane, Kei-Turng Shih

Theses

Ditertiary-butyl silane (DTBS) and ammonia have been used to deposit silicon nitride films by plasma enhanced chemical vapor deposition (PECVD) with ammonia. The films were deposited in the temperature range of 150 to 300 °C with 0.15 watts/cm² plasma power density at 100 KHz. The NH₃/DTBS ratio was varied from 1 to 18, the total flow rate was varied between 195 and 570 sccm with total pressure ranging from 0.2 to 0.6 torr.

The deposition rate of these films was found to increase as total pressure or total flow rate increases, but was found to decrease as …

Mathematical Modeling Of Chemical Vapor Deposition Processes And Its Application To Thin Film Technology, Norman W. Loney

Dissertations

A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme.

Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as …

Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran

Theses

Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol^-1 . IR spectroscopic study showed an absorption peak centered at 780 cm^{-1 …}