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Low Noise Nmos Imager Fabrication With A Study On The Effect Of Photodiode Shape On Dark Current, Steven Taylor
Low Noise Nmos Imager Fabrication With A Study On The Effect Of Photodiode Shape On Dark Current, Steven Taylor
Masters Theses
The purpose of this project was to fabricate a low noise N-type Metal-Oxide- Semiconductor (NMOS) imager in the Grand Valley State University (GVSU) Cleanroom with a focus on reducing pixel dark current. Previous research suggests Photodiode (PD) shape affects dark current and charge transfer characteristics of the pixel. Five PD shapes were designed to determine an optimized pixel shape with respect to dark performance. PN junction PDs with the Three Transistor (3T) pixel architecture were found to be the most suitable for imager fabrication in the GVSU cleanroom. The integrated circuit layout of several 8x8 pixel arrays was designed to …