Engineering Commons^™

Thin Film Transistor Modeling: Frequency Dispersion, Michael Shur

Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)

Using new materials (including organic materials), scaling down to shorter device sizes, using printed TFT technology, and operating Thin Film Transistors (TFTs) at higher frequencies all bring upfront the issues of frequency dispersion of the TFT current-voltage and capacitance-voltage characteristics. This dispersion depends on the interplay of the contact phenomena and electron transport in the device channel. The standard way to account for the frequency dispersion is using the Elmore model (see Fig. 1 a) [1,2], which introduces the RC delays to reflect the propagation time of the carriers along the channel. However, this model is not sufficient for the …

Equilibrium Mobility In Igzo Tft: Existence Of The Intermediate Boolchand Phase?, Dieter G. Ast

Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)

This talk will consider the applicability of modern topological constraint theory of glass developed by Boolchand, Thorp and Phillips (BTP) to IGZO and ask if it might explain the high (compared to spins) H content of a-Si:H.

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Tft And Ulsi Technologies: The Parallel Evolution Of The Research And The Higher Education In France, Olivier Bonnaud

Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)

This paper deals with the evolution since the early eighties of the microelectronics applied to integrated circuits and to large area electronics. The evolution in France was linked to a very strong effort of the French government (Microelectronics national plan) to improve the Higher Education in this field and to form with the knowledge and the know-how the future engineers, masters and doctors to the research and development and to the production. A way to help the growth of microelectronics companies mainly in France, but also for the world in the frame of multinational companies. More recently, a new national …

Neuromorphic Application Of Oxide Semiconductors, Mutsumi Kimura, Yasuhiko Nakashima, Tomoya Kameda, Tokiyoshi Matsuda

Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)

Artificial intelligences are promising as key technologies in future societies. However, the conventional ones are executed using complicated software on high-specked hardware, and the machine size is very bulky and power consumption is unbelievably huge. Therefore, we are investigating "braintype integrated system", namely, neural network built only by hardware, which can be compact, low power, robust, and integrated on everything in future. In order to realize that system, simplification of the processing elements, such as neurons and synapse, three-dimensional structure, and low cost fabrication are required. We have succeeded in that simplification and are trying to utilize oxide semiconductors for …

Conference Program, Yue Kuo, Olivier Bonnaud

Semiconductor Technology for Ultra-Large Scale Integrated Circuits and Thin Film Transistors VI (ULSIC vs TFT 6)

No abstract provided.