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- Ceramic-matrix composites--Fatigue (3)
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Articles 1 - 12 of 12
Full-Text Articles in Engineering
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Theses and Dissertations
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …
Fatigue Behavior Of A Cross-Ply Ceramic Matrix Composite At Elevated Temperature Under Tension-Tension Loading, Craig D. Steiner
Fatigue Behavior Of A Cross-Ply Ceramic Matrix Composite At Elevated Temperature Under Tension-Tension Loading, Craig D. Steiner
Theses and Dissertations
This study investigated the fatigue behavior and damage mechanisms of a [0-90]4s SiC-MAS ceramic matrix composite under tension-tension loading at two elevated temperatures and two frequencies. Stress and strain hystereses, maximum and minimum strain, and modulus of elasticity were evaluated to characterize the material behavior. Microscopy and fractography were used to evaluate damage progression and mechanisms. Fatigue life was independent of frequency at both temperatures.
Satellite Surface Material Composition From Synthetic Spectra, Eugene L. Caudill
Satellite Surface Material Composition From Synthetic Spectra, Eugene L. Caudill
Theses and Dissertations
The objective of this research was to determine if measurements from a Sagnac interferometer could provide reliable estimates of satellite material composition. The Sagnac interferometer yields a spatial interferogram that can sampled by a linear detector array. The interferogram is related to the spectrum of the source through a Fourier transform. Here, spectral reflectivities of nine common satellite materials were used to simulate the spectrum on obtains from an ideal Sagnac interferometer in the beam-train of a ground-based telescope whose mission is to view satellites. The signal-to-noise ratio of the spectrum was varied to simulate the effect of range variation …
The Junction Characteristics And Current Conduction Mechanisms Of Gainp2 N+P Diodes And Solar Cells, Kitt C. Reinhardt
The Junction Characteristics And Current Conduction Mechanisms Of Gainp2 N+P Diodes And Solar Cells, Kitt C. Reinhardt
Theses and Dissertations
This work involves an investigation of GaInP2 n+p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at E …
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Theses and Dissertations
Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …
Investigation Into The Behavior Of Geometrically Nonlinear Composite Arches, John C. Bailey
Investigation Into The Behavior Of Geometrically Nonlinear Composite Arches, John C. Bailey
Theses and Dissertations
This research modifies the existing finite element formulation of a potential energy based large deformation and moderate rotation theory. Hermitian shape functions replace the existing linear bending angle interpolations. Negligible differences between the two formulations indicate the underlying kinematics limit the accuracy, not the finite element interpolations. Using the new program, numerous nonlinear arch geometries are modeled to investigate the effects of arc length and thickness variations. Local and global snapping phenomena are captured as well as through the thickness shear driven nonlinearities.
Fatigue Behavior Of A Cross-Ply Ceramic Matrix Composite Subjected To Tension-Tension Cycling With Hold Time, Scott A. Grant
Fatigue Behavior Of A Cross-Ply Ceramic Matrix Composite Subjected To Tension-Tension Cycling With Hold Time, Scott A. Grant
Theses and Dissertations
This study was carried out to investigate the elevated temperature behavior of the SiC-MAS5 cross- ply [0-90]4S ceramic matrix composite manufactured by Corning Inc. to fatigue with loading waveforms that combine the characteristics of stress rupture and high cycle fatigue. The test results were compiled in the form of S-N (cycles to failure), S-T (exposure time versus cycles to failure), S-S (energy exposure versus cycles to failure), normalized modulus degradation, strain progression, and hysteresis loop progression. From the mechanical behavior demonstrated by these curves, relationships between the effect of the environment and loading waveform were developed. In addition, a …
Characterization Of Fatigue Behavior Of 2-D Woven Fabric Reinforced Ceramic Matrix Composite At Elevated Temperature, Daniel J. Groner
Characterization Of Fatigue Behavior Of 2-D Woven Fabric Reinforced Ceramic Matrix Composite At Elevated Temperature, Daniel J. Groner
Theses and Dissertations
This study investigated the fatigue behavior and associated damage mechanisms in notched and unnotched enhanced Sic-SiC ceramic matrix composite specimens at 1100°C. Stiffness degradation, strain variation, and hysteresis were evaluated to characterize material behavior. Microscopic examination was performed to characterize damage mechanisms. During high cycle-low stress fatigue tests, far less fiber-matrix interface debond was evident than in low cycle-high stress fatigue tests. Notched specimens exhibited minimal stress concentration during monotonic tensile testing and minimal notch sensitivity during fatigue testing. Damage mechanisms were also similar to unnotched.
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Theses and Dissertations
A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Theses and Dissertations
This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …
The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
Theses and Dissertations
This study on praseodymium Pr luminescence in AlxGa1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 1012 to 5 x 1013 sq cm into AlxGa1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …
Rapid And Accurate Timing Simulation Of Radiation-Hardened Digital Microelectronics Using Vhdl, Charles P. Brothers Jr.
Rapid And Accurate Timing Simulation Of Radiation-Hardened Digital Microelectronics Using Vhdl, Charles P. Brothers Jr.
Theses and Dissertations
This dissertation presents the development of a fast, accurate, timing simulation capability based on VHSIC Hardware Description Language VHDL without the use of back annotation of timing delay information. This VHDL-based timing simulator is intended for use with radiation-hardened microelectronics in simulating timing of circuit operation in pre-radiation, post-radiation 1 MradSi total dose, and ionizing dose radiation environments. Development of the timing models are presented. The implementation of the timing models are incorporated into a VHDL library composed of basic logic gates and flip-flops. Simulations of complex circuits were run in SPICE and VHDL to assess the timing accuracy and …