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Articles 1 - 9 of 9
Full-Text Articles in Engineering
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …
Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds
Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
The authors have established a robust set of growth conditions for homoepitaxy of high-quality InAs with a (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, the authors obtain a transition from a 2D island growth mode to step-flow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12ML/s, and V/III ratio ≥ 40) lead to the growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. The authors see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as …
First Principles Investigation Of Anomalous Pressure-Dependent Thermal Conductivity Of Chalcopyrites, Loay Flalfy, Denis Music, Ming Hu
First Principles Investigation Of Anomalous Pressure-Dependent Thermal Conductivity Of Chalcopyrites, Loay Flalfy, Denis Music, Ming Hu
Faculty Publications
The effect of compression on the thermal conductivity of CuGaS2, CuInS2, CuInTe2, and AgInTe2 chalcopyrites (space group I-42d) was studied at 300 K using phonon Boltzmann transport equation (BTE) calculations. The thermal conductivity was evaluated by solving the BTE with harmonic and third-order interatomic force constants. The thermal conductivity of CuGaS2 increases with pressure, which is a common behavior. Striking differences occur for the other three compounds. CuInTe2 and AgInTe2 exhibit a drop in the thermal conductivity upon increasing pressure, which is anomalous. AgInTe2 reaches a very low thermal conductivity of 0.2 W·m−1 ·K −1 at 2.6 GPa, being beneficial …
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Dissertations
Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …
Investigation Of Electronic And Optical Properties Of 2-Dimensional Semiconductor Tin Selenide (Snse) Thin Films, Shakila Afrin
Investigation Of Electronic And Optical Properties Of 2-Dimensional Semiconductor Tin Selenide (Snse) Thin Films, Shakila Afrin
Dissertations and Theses
Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle this problem and this propels the research for finding novel materials with …
Roadmap On Biological Pathways For Electronic Nanofabrication And Materials, Reza M. Zadegan
Roadmap On Biological Pathways For Electronic Nanofabrication And Materials, Reza M. Zadegan
Materials Science and Engineering Faculty Publications and Presentations
Conventional microchip fabrication is energy and resource intensive. Thus, the discovery of new manufacturing approaches that reduce these expenditures would be highly beneficial to the semiconductor industry. In comparison, living systems construct complex nanometer-scale structures with high yields and low energy utilization. Combining the capabilities of living systems with synthetic DNA-/protein-based self-assembly may offer intriguing potential for revolutionizing the synthesis of complex sub-10 nm information processing architectures. The successful discovery of new biologically based paradigms would not only help extend the current semiconductor technology roadmap, but also offer additional potential growth areas in biology, medicine, agriculture and sustainability for the …
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse
Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse
Legacy Theses & Dissertations (2009 - 2024)
This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …
Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel
Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel
Legacy Theses & Dissertations (2009 - 2024)
Nanomaterials have chemical, electronic, optical, and other properties distinct from their bulk counterparts. However, the atom-precise synthesis of these materials remains a challenge, leaving open many scientific questions regarding the size regime between nanoparticulate (quantum confined) and bulk character. In this work, efforts toward the synthesis of nanoparticulate and atom-precise metal and semimetal materials are described. The synthesis of II-V semiconductor Cd3As2 having a near-zero bandgap is discussed. Analysis by UV-Vis absorption spectroscopy and powder X-ray diffraction indicate the formation of material with unexpected crystallinity and absorption properties The interaction between the molecular source of As and the solvent was …