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High Switching Endurance In TaoX Memristive Devices, Jianhua Yang, M Zhang, John Strachan, Feng Miao, Matthew Pickett, Ronald Kelley
High Switching Endurance In TaoX Memristive Devices, Jianhua Yang, M Zhang, John Strachan, Feng Miao, Matthew Pickett, Ronald Kelley
Electrical and Computer Engineering Faculty Publication Series
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaO��/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
Diffusion Of Adhesion Layer Metals Controls Nanoscale Memristive Switching, Jianhua Yang, John Strachan, Qiangfei Xia, Douglas Ohlberg, Philip Kuekes, Ronald Kelley, William Stickle, Duncan Stewart, Gilberto Medeiros-Ribeiro,, R Stanley Williams
Diffusion Of Adhesion Layer Metals Controls Nanoscale Memristive Switching, Jianhua Yang, John Strachan, Qiangfei Xia, Douglas Ohlberg, Philip Kuekes, Ronald Kelley, William Stickle, Duncan Stewart, Gilberto Medeiros-Ribeiro,, R Stanley Williams
Electrical and Computer Engineering Faculty Publication Series
Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 °C for 1 hour.