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Full-Text Articles in Engineering
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Electrical & Computer Engineering Faculty Publications
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …