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Silicon Dry Etch Process For Shallow Trench Isolation, Nathaniel Langdon
Silicon Dry Etch Process For Shallow Trench Isolation, Nathaniel Langdon
Journal of the Microelectronic Engineering Conference
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology in that STI increases the packing density, has superior latch-up immunity, smaller channel-width encroachment, and better planarity, allowing for smaller and thus faster and/or less power hungry devices. The goal of this project was to develop an anisotropic silicon etch process for use in the Drytek Quad 482 Reactive Ion Etch system, yielding a depth of at least 0.5μm and steep sidewall angle of the trench. For this study, varying plasma chemistries of consisting sulfur hexafluoride, oxygen and argon are examined to etch the bulk silicon …
Development Of A Pecvd Tetraethylorthosilicate (Teos) Fill Process For Shallow Trench Isolation, Erik P. Dolatowski
Development Of A Pecvd Tetraethylorthosilicate (Teos) Fill Process For Shallow Trench Isolation, Erik P. Dolatowski
Journal of the Microelectronic Engineering Conference
As transistors have decreased in size and increased in packing density, a need has arisen for an alternative to the LOCOS method of isolation. Shallow trench isolation (STI) offers superior packing density and stronger immunity to latch up with other side benefits. A TEOS oxide fill for STI is a good choice because its mobile chemical precursors offer a high level of conformality. A plasma enhanced deposition of this oxide allows for greater control over film characteristics. A designed experiment was created to examine the effects of temperature, RF power, and substrate position (measured through electrode spacing) on the oxide …