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Full-Text Articles in Engineering

Air-Trench Splitters For Ultra-Compact Ring Resonators In Low Refractive Index Contrast Waveguides, Seunghyun Kim, Gregory P. Nordin, Yongbin Lin, Nazli Rahmanian Jan 2008

Air-Trench Splitters For Ultra-Compact Ring Resonators In Low Refractive Index Contrast Waveguides, Seunghyun Kim, Gregory P. Nordin, Yongbin Lin, Nazli Rahmanian

Faculty Publications

We demonstrate air-trench splitters in low index contrast perfluorocyclobutyl (PFCB) waveguides. Splitters are fabricated by etching 800 nm wide high aspect ratio (18:1) trenches. The measured optical loss is 0.4 dB/splitter. The reflection/transmission splitting ratio is 0.859/0.141, which closely matches two-dimensional finite difference time domain (2DFDTD) simulation results. Air-trench splitters and bends are used to demonstrate an ultra-compact ring resonator (RR) with a size reduction of 1,700 compared to a RR based on traditional curved waveguides in the same material system. A comparison between the RR’s measured and analytically calculated performance shows close agreement when splitter and bend losses are …


Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey Jan 2008

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …