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Observations Of Piezoresistivity For Polysilicon In Bending That Are Unexplained By Linear Models, Tyler L. Waterfall, Gary K. Johns, Robert K. Messenger, Brian D. Jensen, Timothy W. Mclain, Larry L. Howell
Observations Of Piezoresistivity For Polysilicon In Bending That Are Unexplained By Linear Models, Tyler L. Waterfall, Gary K. Johns, Robert K. Messenger, Brian D. Jensen, Timothy W. Mclain, Larry L. Howell
Faculty Publications
Compliant piezoresistive MEMS sensors exhibit great promise for improved on-chip sensing. As compliant sensors may experience complex loads, their design and implementation require a greater understanding of the piezoresistive effect of polysilicon in bending and combined loads. This paper presents experimental results showing the piezoresistive effect for these complex loads. Several n-type polysilicon test structures, fabricated in MUMPs and SUMMiT processes, were tested. Results show that, while tensile stresses cause a linear decrease in resistance, bending stresses induce a nonlinear rise in resistance, contrary to the effect predicted by linear models. In addition, tensile, compressive, and bending loads combine in …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …