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Full-Text Articles in Engineering
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Electrical & Computer Engineering Faculty Publications
Model studies of current conduction and breakdown in TiO2 were carried out. Our simulation results indicate that electrical breakdown of TiO2 under multiple-pulsed conditions can occur at lower voltages as compared to quasi-dc biasing. This is in agreement with recent experimental data and is indicative of a cumulative phenomena. We demonstrate that the lower breakdown voltages observed in TiO2 under pulsed conditions is a direct rise-time effect, coupled with successive detrapping at the grain boundaries. 2007 American Institute of Physics.
Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan
Optical And Electrical Properties Of Cualse² Thin Films Obtained By Selenization Of Cu/Al/Cu... Al/Cu Layers Sequentially Deposited, J. C. Bernède, S. Marsillac, C. El Moctar, A. Conan
Electrical & Computer Engineering Faculty Publications
Optical and electrical properties of CuAlSe2 thin films obtained by selenization of Cu/Al/Cu...Al/Cu layers sequentially deposited have been investigated. It is shown that the expected energy gap (2.67 eV) is measured for well crystallized films, whereas a slightly higher value is measured for films not so well crystallized. Raman diffusion also shows differences between well and poorly crystallized films with peaks corresponding to the reference powder for the former samples. A p-type conductivity is found whatever the crystalline quality of the samples. The conductivity of the films depends also strongly on their crystalline properties. When the films are badly …