Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

PDF

Electrical & Computer Engineering Faculty Publications

Series

1988

Chemical elements

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler Jan 1988

Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler

Electrical & Computer Engineering Faculty Publications

Low-temperature Raman scattering measurements were carried out to characterize Si-on-SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace-annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250°C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed …


Raman Scattering Characterization Of The Microscopic Structure Of Semi-Insulating Polycrystalline Si Thin Films, D.J. Olego, H. Baumgart Jan 1988

Raman Scattering Characterization Of The Microscopic Structure Of Semi-Insulating Polycrystalline Si Thin Films, D.J. Olego, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Raman scattering experiments were carried out to study the microscopic structure of semi-insulating polycrystalline Si (SIPOS) thin films prepared by low-pressure chemical vapor deposition. The samples contain 18, 25, and 30 at. % of oxygen and after growth they were annealed at 900 and 1000°C for 30 min. The Raman spectra show in the vibrational region of the optical frequencies of Si two bands, which arise from scattering in crystalline grains and disordered forms of Si. The behavior of these bands as a function of oxygen content and annealing temperatures was established in detail. The crystallinelike band peaks below the …