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Full-Text Articles in Engineering
A Novel Methodology For Spatial Damage Detection And Imaging Using A Distributed Carbon Nanotube-Based Composite Sensor Combined With Electrical Impedance Tomography, Hongbo Dai, Gerard J. Gallo, Thomas Schumacher, Erik T. Thostenson
A Novel Methodology For Spatial Damage Detection And Imaging Using A Distributed Carbon Nanotube-Based Composite Sensor Combined With Electrical Impedance Tomography, Hongbo Dai, Gerard J. Gallo, Thomas Schumacher, Erik T. Thostenson
Civil and Environmental Engineering Faculty Publications and Presentations
This paper describes a novel non-destructive evaluation methodology for imaging of damage in composite materials using the electrical impedance tomography (EIT) technique applied to a distributed carbon nanotube-based sensor. The sensor consists of a nonwoven aramid fabric, which was first coated with nanotubes using a solution casting approach and then infused with epoxy resin through the vacuum assisted resin transfer molding technique. Finally, this composite sensor is cured to become a mechanically-robust, electromechanically-sensitive, and highly customizable distributed two-dimensional sensor which can be adhered to virtually any substrate. By assuming that damage on the sensor directly affects its conductivity, a difference …
Semiconductor Film Grown On A Circular Substrate: Predictive Modeling Of Lattice-Misfit Stresses, Ephraim Suhir, Johann Nicolics, G. Khatibi, M. Lederer
Semiconductor Film Grown On A Circular Substrate: Predictive Modeling Of Lattice-Misfit Stresses, Ephraim Suhir, Johann Nicolics, G. Khatibi, M. Lederer
Mechanical and Materials Engineering Faculty Publications and Presentations
effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN …