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The Anodic Dissolution Reaction Of Insb: Etch Patterns, Electron Number, Anodic Disintegration, And Film Formation, Martin E. Straumanis, Lih Da Hu

Materials Science and Engineering Faculty Research & Creative Works

The etching behavior of the inverse {111} planes of undoped, semiconducting, n-type, InSb single crystals was explored. Depending upon the etchant, including anodic dissolution, various etch patterns were obtained on the inverse planes. In general, the etch pits on the In{111} plane were round, and the face was shiny, whereas the face of the inverse plane was dark and rough. The rates of dissolution in the electrolytes used were very low, especially in absence of oxidizers. The components dissolve as In3+ and Sb3 +. At current densities above 40 or 60 mA cm-2 (on Sb{111} or In{111}), growth of a …