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Full-Text Articles in Engineering
Theoretical Foundations For Determining Kinematic Parameters Of A Jet Unit, Kudrat Raximov, A.R. Babaev, Dilbar Abduraimova
Theoretical Foundations For Determining Kinematic Parameters Of A Jet Unit, Kudrat Raximov, A.R. Babaev, Dilbar Abduraimova
Journal of Tashkent Institute of Railway Engineers
This article discusses the theoretical basis of the dependence of the kinematic parameters, in particular the average speed of flow rate in the suction pipeline of the jet apparatus intended for cleaning water bodies from silting, from changes in the pressure in the mixing chamber. In the problem is considered a single-phase flow, that is, the density of the working and the suction fluid are the same.
Gis-Based Approach For Sinkhole Occurrence Risk Mitigation In Urban Areas For Historic Wieliczka Salt Mine, Agnieszka Malinowska, Ryszard Hejmanowski
Gis-Based Approach For Sinkhole Occurrence Risk Mitigation In Urban Areas For Historic Wieliczka Salt Mine, Agnieszka Malinowska, Ryszard Hejmanowski
Gorniy vestnik Uzbekistana
The article presents the results of the definition of a new methodology for assessing the risk of flooding a shallow slotted mine, which was carried out on the square above the Wieliczka Salt Mine, which is a world heritage. Vertical stresses are estimated on the basis of the theoretical state of rock mass deformation in the area of test chambers. In addition, the risk for chambers indicated in the zone was calculated based on the theory of arctic pressure. The final stage of the study was spatial analysis, which led to the identification of chambers, potentially subject to the influence …
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.