Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Engineering
The Method Of Pulse Demagnetization Of Rail Lash Products, J.F. Kurbanov
The Method Of Pulse Demagnetization Of Rail Lash Products, J.F. Kurbanov
Journal of Tashkent Institute of Railway Engineers
This article discusses methods for eliminating impulse noise affecting the operation of a complex locomotive safety device – unified (CLSD-U). The calculation and recommendations for the modernization of the core of the receiving coils of locomotives. The optimal parameters of induction in track circuits for the normal functioning of the CLSD-U device are determined. Demagnetization devices have been developed, both stationary and mobile, on trolleys at a speed of 5km/h and on the platform at a speed of 80km/h.
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
The Principles Of Increasing The Sensitivity Of Transistor Structures To External Influences, Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, Akmal A. Turaev
Euroasian Journal of Semiconductors Science and Engineering
This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.