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California Polytechnic State University, San Luis Obispo
A. Chalcogenides; A. Amorphous materials; B. Vapor deposition; C. Raman spectroscopy
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The Effects Of Thermal Annealing On The Obliquely Deposited Ag–Ge–S Thin Films, F. Wang, W. P. Dunn, M. Jain, C. De Leo, N. Vicker, Richard N. Savage, Xiaomin Jin, S. Mamedov, P. Boolchand
The Effects Of Thermal Annealing On The Obliquely Deposited Ag–Ge–S Thin Films, F. Wang, W. P. Dunn, M. Jain, C. De Leo, N. Vicker, Richard N. Savage, Xiaomin Jin, S. Mamedov, P. Boolchand
Materials Engineering
Obliquely deposited thin films of ternary Ag–Ge–S glasses are characterized in this work. Thin films are fabricated in a vacuum thermal evaporator at different evaporation angles and examined by Raman spectroscopy. The Raman mode frequency of GeS4 corner-sharing (CS) structure of the as-deposited films display a red-shift as a function of Ag content due to reduced global connectivity, and therefore decreased network stress. Film thickness of normally deposited thin films is significantly less when compared against obliquely deposited ones. Sulfur-ring (S8) modes are observed in thin films but not in corresponding bulk material. Thermal annealing of thin …