Engineering Commons^™

Integration Of Thin Film Tpv Cells To Cvd Diamond Heat Spreaders, Emma J. Renteria

Electrical and Computer Engineering ETDs

In this work, techniques to isolate thermophotovoltaic (TPV) devices from the growth substrate and their subsequent integration with Chemical Vapor Deposition (CVD) diamond heat spreaders will be discussed, with the envisioned goal of fabricating thermally managed cells. CVD diamond heat spreaders are a great option for thermal management of TPV cells. The key requirement, however, is the bonding of the TPV cell directly onto the diamond wafer without the presence of thick (>350 μm) growth substrates, which can offer significant thermal resistance.

The first approach is to release GaSb epitaxial layers from GaSb substrates. However, this is challenging due …

Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami

Physics & Astronomy ETDs

Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …

Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji

Electrical and Computer Engineering ETDs

Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.

Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …