Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 7 of 7
Full-Text Articles in Engineering
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse
Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse
Legacy Theses & Dissertations (2009 - 2024)
This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.
An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens
An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens
Legacy Theses & Dissertations (2009 - 2024)
Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Legacy Theses & Dissertations (2009 - 2024)
Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete …
Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee
Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee
Legacy Theses & Dissertations (2009 - 2024)
Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.