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Physics

Air Force Institute of Technology

1995

Articles 1 - 9 of 9

Full-Text Articles in Engineering

Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter Dec 1995

Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter

Theses and Dissertations

Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …

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Computer-Aided Diagnosis Of Mammographic Masses, William E. Polakowski Dec 1995

Computer-Aided Diagnosis Of Mammographic Masses, William E. Polakowski

Theses and Dissertations

A new Model-Based Vision algorithm was developed to find possibly cancerous regions of interest (ROIs) in digitized mammograms and to correctly identify the malignant masses. This work has shown a sensitivity of 92 percent for locating malignant ROIs. The database contained 272 images (12 bit, 1OO microns) with 36 malignant and 53 benign mass images. Of the 53 biopsied benign cases, 74 percent were correctly classified. The Focus of Attention (segmentation) Module algorithm used a physiologically motivated Difference of Gaussians (DoG) filter to highlight mass-like regions in the mammogram. The Index Module labeled the regions by their hypothesized class: large …

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Maximum Likelihood Estimation Of Wave Front Slopes Using A Hartmann-Type Sensor, Scott A. Sallberg Dec 1995

Maximum Likelihood Estimation Of Wave Front Slopes Using A Hartmann-Type Sensor, Scott A. Sallberg

Theses and Dissertations

Current methods for estimating the wave front slope at the pupil of a telescope equipped with a Hartmann-type wave front sensor (H-WFS) are based on a simple centroid calculation of the intensity distributions (spots) recorded in each subaperture of the H-WFS. The centroid method does not include any knowledge concerning correlation properties of the slopes over the subapertures or the amount of light collected by the telescope and diverted to the H-WFS for wave front reconstruction purposes. This thesis devises a maximum likelihood (ML) estimation of the spot centroids by incorporating statistical knowledge of the spot shifts. The light level …

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Effects Of Neutron Radiation On Resonant Cavity Light-Emitting Diodes, Daniel S. Hinkel Dec 1995

Effects Of Neutron Radiation On Resonant Cavity Light-Emitting Diodes, Daniel S. Hinkel

Theses and Dissertations

Resonant Cavity Light Emitting Diodes (RCLEDs) were irradiated in Ohio State University's nuclear reactor to determine the effects of Neutron displacement damage. The RCLEDs were characterized both before and after irradiation by their current versus voltage curves (I-V curves) and external light power versus current curves (L-I curves). The I-V curves showed an increase in the "knee voltage" at a neutron fluence of 1.45x1017 neutrons/cm2. Logarithmic decreases in external light power and differential quantum efficiency were observed. Significant decreases in external light power were observed at neutron fluences greater than 5.1x1013 neutrons/cm2. Equations were developed to …

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Design, Fabrication And Characterization Of Micro Opto-Electro-Mechanical Systems, Darren E. Sene Dec 1995

Design, Fabrication And Characterization Of Micro Opto-Electro-Mechanical Systems, Darren E. Sene

Theses and Dissertations

Several micro-opto-electro-mechanical structures were designed using the Multi-User MEMS Process (MUMPS). Specific design techniques were investigated for improving the capabilities of elevating flip up structures. The integration of several flip up microoptical structures into a microoptical system was explored with emphasis on the development of a microinterferometer. The thermal effects on the Modulus of Elasticity were determined by detecting the resonant frequency for a square Flexure Beam Micromirror Device. The resonance of the device was found to match theory to within 0.1 % and the Modulus of Elasticity was found to decrease by 0.041 GPa/K from 290 to 450 K. …

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Two-Wavelength Neodymium Based Lasers, Scott H. Mccracken Dec 1995

Two-Wavelength Neodymium Based Lasers, Scott H. Mccracken

Theses and Dissertations

A dual wavelength Q switched laser cavity has been successfully designed and assembled to evaluate the new neodymium (Nd) based materials. Initial characterization has been achieved for Nd:YAG and Nd:YLF. The results indicate that for a fixed pulse repetition frequency, the delay time can be used to adjust the relative energy between the 1.06 and 1.32 micrometer pulses. Any deficiency in the performance of one transition can be made up by performance in the other simply by changing the relative amount of time the population inversion is allowed to build up for each pulse. The best performance was obtained using …

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Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley Sep 1995

Non-Imaging Infrared Spectral Target Detection, Matthew R. Whiteley

Theses and Dissertations

Automatic detection of time-critical mobile targets using spectral-only infrared radiance data is explored. A quantification of the probability of detection, false alarm rate, and total error rate associated with this detection process is provided. A set of classification features is developed for the spectral data, and these features are utilized in a Bayesian classifier singly and in combination to provide target detection. The results of this processing are presented and sensitivity of the class separability to target set, target configuration, diurnal variations, mean contrast, and ambient temperature estimation errors is explored. This work introduces the concept of atmospheric normalization of …

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Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak Sep 1995

Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak

Theses and Dissertations

The material parameters and crystalline quality of undoped, MBE-grown InAs1-xSbx nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …

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Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii Jul 1995

Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii

Theses and Dissertations

The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …

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