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Reducing Threading Dislocation In Gasb Epilayer Grown On Gaas Substrate For Photovoltaic And Thermophotovoltaic Application, Ahmad Mansoori

Optical Science and Engineering ETDs

GaSb based photovoltaic devices have been demonstrated on GaAs substrates by an inducing interfacial array of 90° misfit dislocations. Despite the beneficial qualities of the highly stable 90° misfit dislocation, there is a significant density of residual threading dislocations in the GaSb layer, resulting in the degradation of the electrical performance of such photovoltaic cells compared to lattice matched devices. We aim to reduce threading dislocation density by optimizing growth temperature and by using an AlSb dislocation filtering layer. The growth temperature optimization results in a reduction of the threading dislocation density to 1.3 × 10⁸ cm⁻². …