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- FinFET (2)
- ATOMIC LAYER DEPOSITION; FUNCTIONALIZATION (1)
- Atomistic Simulation (1)
- BLOCK-COPOLYMER MICELLES; DRUG-DELIVERY; POLY(ETHYLENE GLYCOL); PACLITAXEL; INTERNALIZATION; FUSION; PROBES; NANOPARTICLES; PERMEABILITY; MECHANISM (1)
- Carbon nanotube (CN); field-effect transistor (FET); gate-all-around (GAA) (1)
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- Carbon nanotube; nanoelectronics; one-dimensional transport; tunneling device (1)
- FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; QUANTUM-CAPACITANCE; SI MOSFET; N-MOSFET; GATE; PERFORMANCE; DEVICES; SOI; SEMICONDUCTOR (1)
- Gate delay; MOSFET; nanowire/tube; one-dimensional (1-D); quantum capacitance; scaling (1)
- Impact ionization; MOSFET; nanowire FET; nanowire growth; Schottky-barrier; steep slope transistors; tunnel FET; VLS growth (1)
- NEMO (1)
- NEMO 3-D (1)
- NEMO1D (1)
- NEMO3D (1)
- OMEN (1)
- Realistic 40 nm InAs HEMT (1)
- Resonant tunneling spectroscopy (1)
- Single donor (1)
- Single donors (1)
- Transport spectroscopy (1)
Articles 1 - 11 of 11
Full-Text Articles in Engineering
Transport-Based Dopant Metrology In Advanced Finfets, Gabriel P. Lansbergen, Rajib Rahman, Cameron J. Wellard, Jaap Caro, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd C. L. Hollenberg, Sven Rogge
Transport-Based Dopant Metrology In Advanced Finfets, Gabriel P. Lansbergen, Rajib Rahman, Cameron J. Wellard, Jaap Caro, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd C. L. Hollenberg, Sven Rogge
Other Nanotechnology Publications
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. Through correlation of experimental data with multimillion atom simulations in NEMO 3-D, we can identify the impurity’s chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground states is the critical need. We therefore demonstrate a new approach to atomistic impurity metrology and confirm the assumption of tunneling through individual impurity quantum states.
Full-Band And Atomisic Simulation Of Realistic 40 Nm Inas Hemt, Mathieu Luisier, Neophytos Neophytou, Neerav Kharche, Gerhard Klimeck
Full-Band And Atomisic Simulation Of Realistic 40 Nm Inas Hemt, Mathieu Luisier, Neophytos Neophytou, Neerav Kharche, Gerhard Klimeck
Other Nanotechnology Publications
A realistic 40 nm InAs high electron mobility transistor is studied using a two-dimensional, full-band, and atomistic Schr¨odinger-Poisson solver based on the sp3d5s∗ tightbinding model. Bandstructure non-parabolicity effects, strain, alloy disorder in the InGaAs and InAlAs barriers, as well as band-to-band tunneling in the transistor OFF-state are automatically included through the full-band atomistic model. The source and drain contact extensions are taken into account a posteriori by adding two series resistances to the device channel. The simulated current characteristics are compared to measured data and show a good quantitative agreement.
From Nemo1d And Nemo3d To Omen: Moving Towards Atomistic 3-D Quantum Transport In Nano-Scale Semiconductors, Gerhard Klimeck, Mathieu Luisier
From Nemo1d And Nemo3d To Omen: Moving Towards Atomistic 3-D Quantum Transport In Nano-Scale Semiconductors, Gerhard Klimeck, Mathieu Luisier
Other Nanotechnology Publications
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant tunneling diode (RTD) to multi-million atom electronic structure modeling and the path for OMEN are laid out. The recent OMEN capabilities enable realistically large 3D atomistic nano-scale device simulation.
Toward Nanowire Electronics, Joerg Appenzeller, Joachim Knoch, Mikael Bjoerk, Heike Riel, Heinz Schmid, Walter Riess
Toward Nanowire Electronics, Joerg Appenzeller, Joachim Knoch, Mikael Bjoerk, Heike Riel, Heinz Schmid, Walter Riess
Other Nanotechnology Publications
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain …
Level Spectrum Of Single Gated As Donors, Gabriel P. Lansbergen, Rajib Rahman, J. Caro, N. Collaert, S. Biesemans, Gerhard Klimeck, S. Rogge, L.C. L. Hollenberg
Level Spectrum Of Single Gated As Donors, Gabriel P. Lansbergen, Rajib Rahman, J. Caro, N. Collaert, S. Biesemans, Gerhard Klimeck, S. Rogge, L.C. L. Hollenberg
Other Nanotechnology Publications
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction with a NEMO-3D model, we can identify the excited states and associate them with either the donors Coulomb potential, a triangular well at the interface or a hybridized combination of the two. The correspondence between the transport measurements, the theoretical model and the local environment provides an atomic understanding of actual gated donors in a nanostructure.
Release Of Hydrophobic Molecules From Polymer Micelles Into Cell Membranes Revealed By Forster Resonance Energy Transfer Imaging, Hongtao Chen, Sungwon Kim, Shuyi Wang, Kinam Park, Ji-Xin Cheng
Release Of Hydrophobic Molecules From Polymer Micelles Into Cell Membranes Revealed By Forster Resonance Energy Transfer Imaging, Hongtao Chen, Sungwon Kim, Shuyi Wang, Kinam Park, Ji-Xin Cheng
Other Nanotechnology Publications
it is generally assumed that polymeric micelles, upon administration into the blood stream, carry drug molecules until they are taken up into cells followed by intracellular release. The current work revisits this conventional wisdom. The study using dual-labeled micelles containing fluorescently labeled copolymers and hydrophobic fluorescent probes entrapped in the polymeric micelle core showed that cellular uptake of hydrophobic probes was much faster than that of labeled copolymers. This result implies that the hydrophobic probes in the core are released from micelles in the extracellular space. Forster resonance energy transfer (FRET) imaging and spectroscopy were used to monitor this process …
Outperforming The Conventional Scaling Rules In The Quantum-Capacitance Limit, Joachim Knoch, W Riess, Joerg Appenzeller
Outperforming The Conventional Scaling Rules In The Quantum-Capacitance Limit, Joachim Knoch, W Riess, Joerg Appenzeller
Other Nanotechnology Publications
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems.
Determination Of The Eigenstates And Wavefunctions Of A Single Gated As Donor, Gabriel P. Lansbergen, R. Rahman, C. J. Wellard, P. E. Rutten, J. Caro, I. Woo, N. Colleart, S. Biersemans, Gerhard Klimeck
Determination Of The Eigenstates And Wavefunctions Of A Single Gated As Donor, Gabriel P. Lansbergen, R. Rahman, C. J. Wellard, P. E. Rutten, J. Caro, I. Woo, N. Colleart, S. Biersemans, Gerhard Klimeck
Other Nanotechnology Publications
Current semiconductor devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottomsup perspective, the smallest functional element within a nanodevice would be a single (dopant) atom itself. Control and understanding over the eigenenergies and wavefunctions of a single dopant could prove a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the …
Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor, Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Joerg Appenzeller
Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor, Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Joerg Appenzeller
Other Nanotechnology Publications
In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance.
Carbon Nanotubes For High-Performance Electronics - Progress And Prospect, Joerg Appenzeller
Carbon Nanotubes For High-Performance Electronics - Progress And Prospect, Joerg Appenzeller
Other Nanotechnology Publications
Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotube-the tube diameter-is the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. in addition, the narrowness of the tube is critical to implementation of novel device concepts like the tunneling transistor. By understanding the unique capabilities of carbon nanotubes and using them in unconventional designs, novel nanoelectronic applications may become feasible. However, much better control of materials quality must be obtained, and new fabrication processes must be …
Influence Of Phonon Scattering On The Performance Of P-I-N Band-To-Band Tunneling Transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Influence Of Phonon Scattering On The Performance Of P-I-N Band-To-Band Tunneling Transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Other Nanotechnology Publications
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors taking semiconducting carbon nanotubes as the channel material. The on current of these devices is mainly limited by the tunneling barrier properties, and phonon-scattering has only a moderate effect. We show, however, that the off current is limited by phonon absorption assisted tunneling, and thus is strongly temperature dependent. Subthreshold swings below the 60 mV/decade conventional limit can be readily achieved even at …