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Full-Text Articles in Engineering
Enhanced Crystallinity Of Triple-Cation Perovskite Film Via Doping Nh4Scn, Ziji Liu, Detao Liu, Hao Chen, Long Ji, Hualin Zheng, Yiding Gu, Feng Wang, Zhi Chen, Shibin Li
Enhanced Crystallinity Of Triple-Cation Perovskite Film Via Doping Nh4Scn, Ziji Liu, Detao Liu, Hao Chen, Long Ji, Hualin Zheng, Yiding Gu, Feng Wang, Zhi Chen, Shibin Li
Electrical and Computer Engineering Faculty Publications
The trap-state density in perovskite films largely determines the photovoltaic performance of perovskite solar cells (PSCs). Increasing the crystal grain size in perovskite films is an effective method to reduce the trap-state density. Here, we have added NH4SCN into perovskite precursor solution to obtain perovskite films with an increased crystal grain size. The perovskite with increased crystal grain size shows a much lower trap-state density compared with reference perovskite films, resulting in an improved photovoltaic performance in PSCs. The champion photovoltaic device has achieved a power conversion efficiency of 19.36%. The proposed method may also impact other optoelectronic …
Enhanced Performance Of Planar Perovskite Solar Cells Using Low-Temperature Solution-Processed Al-Doped Sno2 As Electron Transport Layers, Hao Chen, Detao Liu, Yafei Wang, Chenyun Wang, Ting Zhang, Peng Zhang, Hojjatollah Sarvari, Zhi Chen, Shibin Li
Enhanced Performance Of Planar Perovskite Solar Cells Using Low-Temperature Solution-Processed Al-Doped Sno2 As Electron Transport Layers, Hao Chen, Detao Liu, Yafei Wang, Chenyun Wang, Ting Zhang, Peng Zhang, Hojjatollah Sarvari, Zhi Chen, Shibin Li
Electrical and Computer Engineering Faculty Publications
Lead halide perovskite solar cells (PSCs) appear to be the ideal future candidate for photovoltaic applications owing to the rapid development in recent years. The electron transport layers (ETLs) prepared by low-temperature process are essential for widespread implementation and large-scale commercialization of PSCs. Here, we report an effective approach for producing planar PSCs with Al3+ doped SnO2 ETLs prepared by using a low-temperature solution-processed method. The Al dopant in SnO2 enhanced the charge transport behavior of planar PSCs and increased the current density of the devices, compared with the undoped SnO2 ETLs. Moreover, the enhanced electrical …