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Full-Text Articles in Engineering
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …
Neutron Structural Studies On The Superconducting (Nd₁₋ₓcax)(Ba₁.₆La₀.₄)Cu₃Oz System, Amish G. Joshi, R. G. Kulkarni, William B. Yelon, Ram Prasad, M. R. Gonal
Neutron Structural Studies On The Superconducting (Nd₁₋ₓcax)(Ba₁.₆La₀.₄)Cu₃Oz System, Amish G. Joshi, R. G. Kulkarni, William B. Yelon, Ram Prasad, M. R. Gonal
Physics Faculty Research & Creative Works
We have investigated the influence of Ca ion substitution on the structural and superconducting properties of (Nd1−xCax)(Ba1.6La0.4)Cu3Oz system. Magnetization, x-ray diffraction, and neutron diffraction studies have been carried out on a series of compounds with x=0.0-0.6. The superconducting transition temperature Tc, determined from magnetization measurements, increases with increasing Ca2+ substitution. Neutron diffraction studies reveal that these compounds crystallize in a tetragonal structure (space group P4/mmm). A detailed analysis of the neutron diffraction data reveals that Ca and La ions are intermixed at the nominal Ba and Nd sites. While a major fraction of Ca ions occupy the usual Nd site, …