Engineering Commons^™

Synthesis And Assembly Of Polymer Materials At Interfaces, Xiaoshuang Wei

Doctoral Dissertations

The overarching goal of the thesis is to understand growth and assembly of polymer materials at interfaces. Chapter 2 and Chapter 3 study simultaneous polymer growth and assembly at fluid interfaces, where in-situ photopolymerization and vapor phase deposition were utilized to grow polymers, respectively. Chapter 4 leverages capillary condensation to pattern polymer growth at solid substrates. Chapter 1 provides background information on polymer materials at interfaces, and vapor phase deposition method (initiated chemical vapor deposition, iCVD) to grow polymers. This chapter also reviews polymer thin film wetting, and colloidal assemblies at interfaces. In Chapter 2, we demonstrate the preparation …

Fabrication And Non-Covalent Functionalization And Characterization Of Graphene-Based Devices On Novel Substrate Cadmium Trithiophosphate (Iv) — Cdps, Abayomi Omotola Omolewu

Graduate Theses and Dissertations

With graphene at the center of several application areas such as sensing, circuits, high-frequency devices for communication systems, etc., it is crucial to understand how the intrinsic properties of devices made from graphene and other materials like platinum and palladium nanoparticles affect the performance of such devices for the specific application area. Many graphene-based devices for different application areas have focused mainly on the material composition of the graphene-based devices and how it affects performance parameters for the specific application. However, it would be insightful to understand how the intrinsic electrical properties of the graphene devices for different applications affect …

Combinatorial Cuni Alloy Thin Film Catalysts For Layer Number Regulation In Cvd Grown Graphene, Sumeer Khanna

Masters Theses

In this work, synthesis of combinatorial library of Cu_xNi_1-x (copper nickel) alloy thin films via co-sputtering from Cu (copper) and Ni (nickel) targets as catalysts for chemical vapor deposition (CVD) growth of graphene is reported. The gradient alloy morphology, composition and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD), respectively. Subsequently, the Cu_xNi_1-x alloy thin films were used to grow graphene in a CH₄-Ar-H₂ (methane-argon-hydrogen) ambient in thermal CVD tube furnace. The underlying rationale is to adjust the Cu_xNi_{1-x …}

Influence Of Growth Parameters On The Synthesis Of Mos2 Films, Victor Okonkwo

Honors Undergraduate Theses

Information processing is crucial in modern society, placing a great emphasis on the performance of optoelectronic devices to match ever increasing processing and memory needs. Within these devices, MoS₂ has demonstrated great potential as transistors due to its enhanced electrostatic control. As increased layer thickness of quality MoS₂ films have been shown to boost the performance of its transistors, growth parameters for the synthesis of ideally uniform and large area multilayered films via chemical vapor deposition were investigated. By increasing the flow pressure in the system and the growth time, increasing levels of thickness and nucleation density was …

Development Of Graphene Synthesis And Characterization Techniques Toward Cmos Applications And Beyond, Otto Kno Zietz

Dissertations and Theses

Graphene exhibits mechanical and electrical properties which, coupled with its two dimensional (2D) morphology, make it an attractive material component for inclusion in a wide range of industries. Since the discovery of graphene in 2004, industry adoption has been limited due to the demanding synthesis requirements for high quality and connected graphene as well as the difficulties associated with direct incorporation. Chemical vapor deposition (CVD) has emerged as the most cost efficient method for producing high quality graphene at scales suitable for mass production. However, the 1000°C temperatures and micrometer thick catalysts required for this process preclude direct inclusion in …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Open-Source Automated Chemical Vapor Deposition System For The Production Of Two-Dimensional Nanomaterials, Lizandra Williams-Godwin, Dale Brown, Richard Livingston, Tyler Webb, Lynn Karriem, Elton Graugnard, David Estrada

Materials Science and Engineering Faculty Publications and Presentations

The study of two- dimensional (2D) materials is a rapidly growing area within nanomaterials research. However, the high equipment costs, which include the processing systems necessary for creating these materials, can be a barrier to entry for some researchers interested in studying these novel materials. Such process systems include those used for chemical vapor deposition, a preferred method for making these materials. To address this challenge, this article presents the first open-source design for an automated chemical vapor deposition system that can be built for less than a third of the cost for a comparable commercial system. The materials and …

Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song

Legacy Theses & Dissertations (2009 - 2024)

Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …

Direct Synthesis Of Graphene On Niobium And Niobium Nitride, Robin Ekeya, Otto Zietz

Undergraduate Research & Mentoring Program

Since its isolation by mechanical exfoliation in 2004, graphene has attracted enormous interest from the scientific community not the least because of its unique physical and electronic properties. Among these, graphene’s ballistic electron transport and proximity induced superconductivity make graphene-superconductor (GS) hybrid structures a scientifically promising area.

Measuring The Double Layer Capacitance Of Electrolyte Solutions Using A Graphene Field Effect Transistor, Agatha Ulibarri

Senior Theses

When operating graphene field effect transistors (GFETs) in fluid, a double layer capacitance (C_dl) is formed at the surface. In the literature, the C_dl is estimated using values obtained using metal electrode experiments. Due to the distinctive electronic and surface properties of graphene, there is reason to believe these estimates are inadequate. This work seeks to directly characterize the double layer capacitance of a GFET. A unique method for determining the C_dl has been implemented, and data has been obtained for three electrolytes and one ionic fluid. The results yield dramatically lower C_dl values than …

Synthesis Of Graphene And Graphene-Based Composite Membrane, Yuanjun Fan

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Vibration membrane equipped for earphone requires high performance in both mechanical properties and electronic properties. With extraordinary properties on both, graphene and graphene-based composite materials appear as a promising candidate for this application. Chemical vapor deposition (CVD) is believed to be the most convenient way to synthesize a large area (on scale of square centimeters) as well as a homogeneous thickness for the membrane. The thesis focuses on applying control variable experiment method to analyze different effects on mechanical property of the two CVD setting parameters: cooling rate, and hydrocarbon precursor. For isolating the specimens efficiently, a modified electrochemical method …

An Open-Source, Automated Chemical Vapor Deposition System For The Production Of 2d Materials, Dale Brown

Boise State University Theses and Dissertations

While interest in two-dimensional materials has exploded in recent years, the high cost of chemical vapor deposition (CVD) systems can act as a barrier to entry for some researchers interested in studying these materials. This thesis presents an open-source design for an automated CVD that can be built for a fraction of the cost of similarly capable commercial systems and that can easily be customized and expanded.With a CVD built as described,growth of high quality graphene and graphene foam is demonstrated.These results highlight the flexibility of the open-source design in producing a variety of nanomaterials, which are at the forefront …

Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman

Graduate Theses and Dissertations

Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.

The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an …

Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …

Low Temperature Thermally Activated Cvd Of Silicon On Molybdenum For Oxidation Protection, Brian C. Jolly

Masters Theses

The United States Global Threat Reeducation Initiative (GTRI) is promoting the production of molybdenum-99 without the use of uranium-235. One possible route, called neutron capture technology, is through the activation of molybdenum-98 via irradiation. GE-Hitachi has identified a location within their boiling water reactors for molybdenum-98 irradiation, but the elevated temperatures present risk oxidizing the molybdenum. This work explored using a silicon coating to protect the molybdenum from oxidation. With silane gas as the precursor, chemical vapor deposition was employed to produce the silicon coating. Characterization was performed and showed a discrete silicon layer was deposited with little to no …

Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi

Legacy Theses & Dissertations (2009 - 2024)

The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …

Synthesis And Electrochemical Performance Of Nano Licopo4 By Polyol Method, Fei Wang, Yang Jun

Journal of Electrochemistry

High potential LiCoPO₄ cathode material was synthesized by polyol method. Carbon layer of ca. 3 nm thick was coated on the LiCoPO4 surfaces by chemical vapor deposition from methylbenzene. Crystalline structure, morphology and electrochemical performance of the sample were studied by XRD, SEM, TEM, CV and galvanostatic charge/discharge curve. The synthesized material via polyol method showed a pure phase of LiCoPO₄. The LiCoPO₄/C electrode delivered a high discharge capacity of 132 mAh·g^-1 and maintained 78% of the initial capacity after 50 cycles at 0.1C rate. The two-step extraction/insertion behavior of Li⁺ in LiCoPO4/C …

Chemical Vapor Deposition Of Polymeric Films, Chi Yu

Theses

Poly-peri-naphthalene (PPN) is a one-dimensional (1 -D) graphite polymer with unique planar ladder-like conjugated molecular structure. PPN was predicted to be a good intrinsic conductor and have high thermal stability and high environmental stability.

In this project, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) of carbon films with PPN structure using PTCDA as precursor were carried out under different conditions. There is only limited information in literature on the synthesis of PPN films by PECVD process, which may allow deposition at a higher rate with lower substrate temperature. In this work the influence of deposition parameters, …

Synthesis And Characterization Of Lpcvd Boron Nitride Films For X-Ray Lithography, Wen-Pin Kuo

Theses

Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm …