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Full-Text Articles in Engineering
A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain Mcculloch, John E. Anthony, Lee J. Richter, Dean M. Delongchamp, Oana D. Jurchescu
A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain Mcculloch, John E. Anthony, Lee J. Richter, Dean M. Delongchamp, Oana D. Jurchescu
Chemistry Faculty Publications
Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels …
Proton Irradiation Effect On Thermoelectric Properties Of Nanostructured N-Type Half-Heusler Hf0.25Zr0.75Nisn0.99Sb0.01, Karthik Chinnathambi, Brian J. Jaques
Proton Irradiation Effect On Thermoelectric Properties Of Nanostructured N-Type Half-Heusler Hf0.25Zr0.75Nisn0.99Sb0.01, Karthik Chinnathambi, Brian J. Jaques
Materials Science and Engineering Faculty Publications and Presentations
Thermoelectric properties of nanostructured half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface shows excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and …
Self-Assembly Of (111)-Oriented Tensile-Strained Quantum Dots By Molecular Beam Epitaxy, Christopher F. Schuck, Robin A. Mccown, Ashlie Hush, Austin Mello, Simon Roy, Joseph W. Spinuzzi, Paul J. Simmonds
Self-Assembly Of (111)-Oriented Tensile-Strained Quantum Dots By Molecular Beam Epitaxy, Christopher F. Schuck, Robin A. Mccown, Ashlie Hush, Austin Mello, Simon Roy, Joseph W. Spinuzzi, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, whereby the SK growth mechanism could not be used to synthesize QDs on (111) surfaces, or QDs under tensile strain, have been overcome. However, a systematic study of the SK growth of (111)-oriented, tensile-strained QDs (TSQDs) as a function of molecular beam epitaxy growth parameters is still needed. Here, the authors explore the effects of deposition amount, substrate temperature, growth rate, and V/III flux ratio on the …