Engineering Commons^™

Oxidation Of Hafnium Diboride—Silicon Carbide At 1500 °C In Air; Effect Of Compressive Stress, Anthony J. Degregoria, Marina B. Ruggles-Wrenn, Glen E. Pry

Faculty Publications

The long-term oxidation behavior of HfB₂ and of HfB₂-20 vol.% SiC was studied. Test samples of each material were oxidized at 1500 °C in air using a box furnace. The exposure times were 0, 0.5, 1, 2, 3, 6, 9, 12, 15, 30, 45 and 90 h. Weight gain, oxide scale composition and oxide scale thickness were characterized for both materials. Crystal structure of the surface scales was analyzed using x-ray diffraction. Oxide scales were further characterized via scanning electron microscopy with energy dispersive spectroscopy analysis. For HfB₂ the oxide scale consists predominantly of porous HfO …