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Full-Text Articles in Engineering
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.
Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko
Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko
Electrical & Computer Engineering Faculty Publications
Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Electrical & Computer Engineering Faculty Publications
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.