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Materials Science and Engineering

Electrical & Computer Engineering Faculty Publications

Series

Optical properties

Publication Year

Articles 1 - 3 of 3

Full-Text Articles in Engineering

Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac Jan 2012

Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac

Electrical & Computer Engineering Faculty Publications

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.


Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem Jan 2001

Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem

Electrical & Computer Engineering Faculty Publications

Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …


Optical Recording Aspects Of Rf Magnetron Sputtered Iron-Garnet Films, J.P. Krumme, V. Doormann, P. Hansen, H. Baumgart, J. Petruzzello, M.P.A. Viegers Jan 1989

Optical Recording Aspects Of Rf Magnetron Sputtered Iron-Garnet Films, J.P. Krumme, V. Doormann, P. Hansen, H. Baumgart, J. Petruzzello, M.P.A. Viegers

Electrical & Computer Engineering Faculty Publications

The intrinsic magneto-optical readout performance in reflection is calculated for bismuth and cobalt-substituted iron-garnet films on a multilayer interference mirror at 800-, 633-, 488-, and 420-nm wavelengths and is compared with that of a trilayer medium composed of an antireflection layer, a rare-earth transition-metal film, and a metallic mirror. It is found, when disregarding inhomogeneities, like irregular domain shape, ripple of the magnetic anisotropy, and surface roughness, that iron garnets are superior to rare-earth transition-metal films at blue to near-ultraviolet wavelengths if operated at thicknesses where optical interference occurs in the magnetic layer. Optical transmittance at these thicknesses is sufficiently …