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Full-Text Articles in Engineering
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Electrical & Computer Engineering Faculty Publications
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.