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Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Electrical & Computer Engineering Faculty Publications
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …