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An Uncooled Mid-Wave Infrared Detector Based On Optical Response Of Laser-Doped Silicon Carbide., Geunsik Lim
An Uncooled Mid-Wave Infrared Detector Based On Optical Response Of Laser-Doped Silicon Carbide., Geunsik Lim
Electronic Theses and Dissertations
This dissertation focuses on an uncooled Mid-Wave Infra-Red (MWIR) detector was developed by doping an n-type 4H-SiC with Ga using the laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide, a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 µm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refraction index and, …
Laser Metallization And Doping For Silicon Carbide Diode Fabrication And Endotaxy, Zhaoxu Tian
Laser Metallization And Doping For Silicon Carbide Diode Fabrication And Endotaxy, Zhaoxu Tian
Electronic Theses and Dissertations
Silicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field strength, highly saturated drift velocity of electrons and outstanding thermal conductivity. With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal deposition and dope in silicon carbide without high temperature annealing, as an alternative to the conventional ion implantation, and find applications of this laser direct write metallization and doping technique …