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Ion Assisted Magnetron Sputtering Of Tantalum Thin Film Deposition And Characterization, Hua Ren
Ion Assisted Magnetron Sputtering Of Tantalum Thin Film Deposition And Characterization, Hua Ren
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The purpose of this research was to investigate the effects of ion bombardment on the crystallographic phases of tantalum films during their deposition by magnetron sputtering process, and to gain understanding of the mechanism of the ion-solid interactions during the thin film growth. Tantalum (Ta) exists in two distinct crystallographic phases: a stable α-phase with a body centered cubic (bcc) lattice structure and a metastable β-phase with a tetragonal lattice structure. The tough and ductile α-phase Ta is desired in most industrial applications, such as diffusion barrier layers in integrated circuits, metallic corrosion protective layers, and in biomedical devices. The …