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Materials Science and Engineering
Ministry of Higher and Secondary Specialized Education of the Republic of Uzbekistan
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Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Acta of Turin Polytechnic University in Tashkent
Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.