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Articles 1 - 7 of 7
Full-Text Articles in Engineering
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …
Electronic Properties Of Mos2/Moox Interfaces: Implications In Tunnel Field Effect Transistors And Hole Contacts, Santosh Kc, Roberto Longo, Rafik Addou, Robert Wallace, Kyeongjae Cho
Electronic Properties Of Mos2/Moox Interfaces: Implications In Tunnel Field Effect Transistors And Hole Contacts, Santosh Kc, Roberto Longo, Rafik Addou, Robert Wallace, Kyeongjae Cho
Faculty Publications
In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect …
Miss Lonesome: Old Boats Past Their Prime, Garth Woodruff
Miss Lonesome: Old Boats Past Their Prime, Garth Woodruff
Faculty Publications
No abstract provided.
Monolayer Mos2 Bandgap Modulation By Dielectric Environments And Tunable Bandgap Transistors, Junga Ryou, Yong-Sung Kim, Santosh Kc, Kyeongjae Cho
Monolayer Mos2 Bandgap Modulation By Dielectric Environments And Tunable Bandgap Transistors, Junga Ryou, Yong-Sung Kim, Santosh Kc, Kyeongjae Cho
Faculty Publications
Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of …
Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
An electron paramagnetic resonance (EPR) spectrum in neutron-irradiated ZnO crystals is assigned to the zinc-oxygen divacancy. These divacancies are observed in the bulk of both hydrothermally grown and seeded-chemical-vapor-transport-grown crystals after irradiations with fast neutrons. Neutral nonparamagnetic complexes consisting of adjacent zinc and oxygen vacancies are formed during the irradiation. Subsequent illumination below ∼150 K with 442 nm laser light converts these (V2−Zn − V2+O)0 defects to their EPR-active state (V−Zn − V2+O)+ as electrons are transferred to donors. The resulting photoinduced S = 1/2 spectrum of the …
Materials Design On The Origin Of Gap States In A High-Κ/Gaas Interface, Weichao Wang, Cheng Gong, Ka Xiong, Santosh Kc, Robert Wallace, Kyeongjae Cho
Materials Design On The Origin Of Gap States In A High-Κ/Gaas Interface, Weichao Wang, Cheng Gong, Ka Xiong, Santosh Kc, Robert Wallace, Kyeongjae Cho
Faculty Publications
Given the demand for constantly scaling microelectronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf(Zr)O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant (high-κ) dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remote-phonon scattering, and dielectric-charge trapping. III-V and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf(Zr)O2/III-V(Ge) has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding …
Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan
Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan
Faculty Publications
We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) …