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New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
Electrical & Computer Engineering Faculty Publications
After deposition, by evaporation under vacuum, of Al/Cu/Te, multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallized in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2-xTe …
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Electrical & Computer Engineering Faculty Publications
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …