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End-To-End Modeling For Variability And Reliability Analysis Of Thin Film Pv, Sourabh Dongaonkar, Muhammad Alam
End-To-End Modeling For Variability And Reliability Analysis Of Thin Film Pv, Sourabh Dongaonkar, Muhammad Alam
Sourabh Dongaonkar
We present an end-to-end modeling framework, spanning the device, module and also system levels, for analyzing thin film photovoltaics (PV). This approach is based on embedding a detailed, statistically relevant, physics based equivalent circuit into module and array level simulations. This approach enables us to analyze key variability and reliability issues in thin film PV, and allows us to interpret their effect on process yield and intrinsic module lifetimes. Our results suggest that the time-zero gap between cell and module efficiencies, a key variability concern for thin-film PV, can be attributed to processrelated shunts with log-normal PDF distributed randomly across …
A Physical Model For Non-Ohmic Shunt Conduction And Metastability In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Souvik Mahapatra, Muhammad Alam
A Physical Model For Non-Ohmic Shunt Conduction And Metastability In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Souvik Mahapatra, Muhammad Alam
Sourabh Dongaonkar
We present a physical model of non-ohmic shunt current in a-Si:H p-i-n solar cells, and validate it with detailed measurements. This model is based on space-charge-limited (SCL) transport through localized p-i-p shunt paths, which can arise from contact metal incorporation in a-Si:H layer. This model explains both the electrical characteristics and the metastable switching behavior of the shunts within an integrated framework. We first verify the SCL model using simulations and statistically robust measurements, and then use this picture to analyze our systematic observations of non-volatile switching in these shunts. Our work not only resolves broad experimental observations on shunt …