Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Diamond (2)
- Avalanche breakdown (1)
- CMRR (1)
- Chemical vapour deposited nanodiamond (1)
- Chemical vapour deposition (1)
-
- Common-mode gain (1)
- Common-mode rejection ratio (1)
- Defect states (1)
- Differential amplifiers (1)
- Differential-mode gain (1)
- Dual-mask self-aligned mould transfer method (1)
- Electroluminescence (1)
- Electron field emission (1)
- Electron-hole recombination (1)
- Elemental semiconductors (1)
- Emission current (1)
- Equivalent half-circuit (1)
- Field effect transistors (1)
- Gallium arsenide (1)
- III-V semiconductors (1)
- Modified Fowler-Nordheim equation (1)
- Nanocrystalline diamond emitters (1)
- Nanostructured materials (1)
- P-n junctions (1)
- Self-aligned gate partitions (1)
- Surface states (1)
- Surface topography (1)
- Transistor configuration (1)
- VFET diff-amp (1)
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
David V. Kerns
Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with …
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
David V. Kerns
Electron field emission from an array of micro-patterned monolithic diamond tips with varying sp2 content has been systematically investigated. The experimental results show that the field emission characteristics can be improved and the turn-on electric field can be reduced more than 50% by increasing sp2 content. Two hypotheses are proposed as an explanation of the effect of sp2 content on the field emission characteristics of diamond tips: the lowering of the work function due to defect-induced band generated bysp2 content in the diamond lattice and an increase in the field enhancement factor due to embedded sp2–diamond–sp2 cascaded microstructures.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.