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A Wide Bandgap Silicon Carbide (Sic) Gate Driver For High Temperature, High Voltage, And High Frequency Applications, Ranjan Raj Lamichhane

Graduate Theses and Dissertations

The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system.

The design of a gate driver circuit with good performance parameters in this completely new under-development …