Engineering Commons^™

Dislocation Reduction In Silicon Doped High Aluminum Content Algan Layers For Deep Uv Optoelectronic Devices, Hung-Chi Chen

Theses and Dissertations

III-Nitride based deep ultraviolet (UV) light emitting diodes (LEDs) are prospective candidates to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources, used in the applications of water and air purification, germicidal and biomedical instrumentation systems, etc. Due to the lack of native substrates and poor carrier injection, AlGaN-based deep UV LED is suffering from low optical power and low overall efficiency, which prevents the availability of low cost, high efficiency deep UV LED on the market.

This dissertation is focused on improving the efficiency of deep UV LEDs, by improving the base template …

Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan

Theses and Dissertations

The field of group III-nitride semiconductors has seen incredible developments during last couple of decades. They are recognized as the most promising materials for a wide field of optoelectronics and electronic devices. Their bandgap ranges from 6.2 eV for AlN to 0.7 eV for InN, covering a wide spectral range from infrared (1.77 mm) to deep ultraviolet (200 nm). Their direct bandgap makes them useful for fabricating optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodetectors. III-nitride semiconductor materials also possess strong bond strengths and exhibit good structural, chemical and thermal stability. These properties make it …