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Full-Text Articles in Engineering
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Theses and Dissertations
Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …
Benefits Of Considering More Than Temperature Acceleration For Gan Hemt Life Testing, Ronald A. Coutu Jr., Robert A. Lake, Bradley D. Christiansen, Eric R. Heller, Christopher A. Bozada, Brian S. Poling, Glen D. Via, James P. Theimer, Stephen E. Tetlak, Ramakrishna Vetury, Jeffrey B. Shealy
Benefits Of Considering More Than Temperature Acceleration For Gan Hemt Life Testing, Ronald A. Coutu Jr., Robert A. Lake, Bradley D. Christiansen, Eric R. Heller, Christopher A. Bozada, Brian S. Poling, Glen D. Via, James P. Theimer, Stephen E. Tetlak, Ramakrishna Vetury, Jeffrey B. Shealy
Faculty Publications
The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and …